資料介紹
US2881Bipolar Hall Switch – Very High SensitivityBased on mixed signal CMOS technology, Melexis US2881 is a Hall-effect device with very high magnetic
sensitivity. It allows using generic magnets, weak magnets or larger air gap.
The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed
with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and
contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is
also an important factor to minimize the effect of physical stress.
This combination results in more stable magnetic characteristics and enables faster and more precise design.
The wide operating voltage from 3.5V to 24V, “L” and “E” operating temperature range and low current
consumption make this device especially suitable for automotive and BLDC motor applications.
The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using
a pull-up resistor tied between a pull-up voltage and the device output.
sensitivity. It allows using generic magnets, weak magnets or larger air gap.
The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed
with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and
contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is
also an important factor to minimize the effect of physical stress.
This combination results in more stable magnetic characteristics and enables faster and more precise design.
The wide operating voltage from 3.5V to 24V, “L” and “E” operating temperature range and low current
consumption make this device especially suitable for automotive and BLDC motor applications.
The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using
a pull-up resistor tied between a pull-up voltage and the device output.
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